Quantum Potential Approaches for Nano-scale Device Simulation

With the progress of integrated technology, the feature size of experimental electrondevices have already been scaled down deeply into the sub–0.1 μm region. For suchultra-small devices, it is increasingly important to take quantum mechanical effects intoaccount for device simulation. In this paper, we present a new approach for quantummodeling, applicable to multi-dimensional ultra-small device simulation. In this work,the quantum effects are represented in terms of quantum mechanically correctedpotential in the classical Boltzmann equation. We apply the Monte Carlo method tosolve the quantum transport equation, and demonstrate that the quantum effects suchas tunneling and quantum confinement effects can be incorporated in the standardMonte Carlo techniques