Analytic I–V Model for Single-Electron Transistors | Zendy

Xiao-Hui Wang | Zendy; Wolfgang Porod | Zendy

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Analytic I–V Model for Single-Electron Transistors

Author(s) -

Xiao-Hui Wang,

Wolfgang Porod

Publication year - 2001

Publication title -

vlsi design

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.123

H-Index - 24

eISSN - 1065-514X

pISSN - 1026-7123

DOI - 10.1155/2001/71879

Subject(s) - transistor , spice , monte carlo method , coulomb blockade , computational physics , electron , bipolar junction transistor , set (abstract data type) , statistical physics , scale (ratio) , capacitance , electronic engineering , materials science , physics , computer science , engineering , electrical engineering , mathematics , quantum mechanics , voltage , statistics , programming language , electrode

We present an analytical model for the I–V characteristics of a single-electron transistor,which may be incorporated in a conventional circuit simulator, such as SPICE. Our modeltakes as its input the physical SET characteristics (capacitances and tunnel resistances,which may be determined experimentally), and it yields I–V curves which are in excellentagreement with the ones obtained from full-scale Monte Carlo simulations

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