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The effects of electron-electron interaction on the electron distribution in n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) are studied using the Local Iterative Monte Carlo (LIMO) technique. This work demonstrates that electron-electron scattering can be efficiently treated within this technique. The simulation results of a 90 run Si-MOSFET are presented. We observe an increase of the high energy tail of the electron distribution at the transition from channel to drain

Influence of Electron-Electron Interaction on Electron Distributions in Short Si-MOSFETs Analysed Using the Local Iterative Monte Carlo Technique