Influence of Electron-Electron Interaction on Electron Distributions in Short Si-MOSFETs Analysed Using the Local Iterative Monte Carlo Technique | Zendy

T. Mietzner | Zendy; J. Jakumeit | Zendy; U. Ravaioli | Zendy

Open Access

Influence of Electron-Electron Interaction on Electron Distributions in Short Si-MOSFETs Analysed Using the Local Iterative Monte Carlo Technique

Author(s) -

T. Mietzner,

J. Jakumeit,

U. Ravaioli

Publication year - 2001

Publication title -

vlsi design

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.123

H-Index - 24

eISSN - 1065-514X

pISSN - 1026-7123

DOI - 10.1155/2001/68217

Subject(s) - mosfet , monte carlo method , electron , electron scattering , scattering , materials science , computational physics , semiconductor , transistor , atomic physics , physics , condensed matter physics , optoelectronics , optics , quantum mechanics , mathematics , statistics , voltage

The effects of electron-electron interaction on the electron distribution in n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) are studied using the Local Iterative Monte Carlo (LIMO) technique. This work demonstrates that electron-electron scattering can be efficiently treated within this technique. The simulation results of a 90 run Si-MOSFET are presented. We observe an increase of the high energy tail of the electron distribution at the transition from channel to drain

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