Non-Equilibrium Hole Transport in Deep Sub-Micron Well-Tempered Si p-MOSFETs | Zendy

J.R. Watling | Zendy; Y.P. Zhao | Zendy; Asen Asenov | Zendy; John R. Barker | Zendy

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Non-Equilibrium Hole Transport in Deep Sub-Micron Well-Tempered Si p-MOSFETs

Author(s) -

J.R. Watling,

Y.P. Zhao,

Asen Asenov,

John R. Barker

Publication year - 2001

Publication title -

vlsi design

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.123

H-Index - 24

eISSN - 1065-514X

pISSN - 1026-7123

DOI - 10.1155/2001/63643

Subject(s) - mosfet , monte carlo method , non equilibrium thermodynamics , materials science , diffusion , ballistic conduction , channel (broadcasting) , optoelectronics , condensed matter physics , statistical physics , computational physics , physics , transistor , electrical engineering , voltage , engineering , thermodynamics , mathematics , quantum mechanics , statistics , electron

As MOSFETs are scaled to deep submicron dimensions non-equilibrium, near ballistic,transport in p-MOSFETs becomes important. Recent experimental data indicates thatas MOSFETs are scaled the performance gap between n and p-channel shrinks. Nonequilibriumtransport effects and performance potentials of ‘Well Tempered’ Si p-MOSFETs with gate lengths of 50 and 25 nm are studied. Monte Carlo and calibratedDrift Diffusion simulations of these devices provide a quantitative estimate of theimportance and the influence of non-equilibrium transport on submicron deviceperformance. A possible explanation for the closing performance gap between n- andp-channel MOSFETs is offered

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