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As MOSFETs are scaled to deep submicron dimensions non-equilibrium, near ballistic,transport in p-MOSFETs becomes important. Recent experimental data indicates thatas MOSFETs are scaled the performance gap between n and p-channel shrinks. Nonequilibriumtransport effects and performance potentials of ‘Well Tempered’ Si p-MOSFETs with gate lengths of 50 and 25 nm are studied. Monte Carlo and calibratedDrift Diffusion simulations of these devices provide a quantitative estimate of theimportance and the influence of non-equilibrium transport on submicron deviceperformance. A possible explanation for the closing performance gap between n- andp-channel MOSFETs is offered

Non-Equilibrium Hole Transport in Deep Sub-Micron Well-Tempered Si p-MOSFETs