Program, Erase and Retention Times of Thin-oxide Flash-EEPROMs | Zendy

Giuseppe Iannaccone | Zendy; S. Gennai | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Program, Erase and Retention Times of Thin-oxide Flash-EEPROMs

Author(s) -

Giuseppe Iannaccone,

S. Gennai

Publication year - 2001

Publication title -

vlsi design

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.123

H-Index - 24

eISSN - 1065-514X

pISSN - 1026-7123

DOI - 10.1155/2001/62583

Subject(s) - stack (abstract data type) , flash (photography) , oxide , optoelectronics , flash memory , materials science , data retention , non volatile memory , voltage , computer science , retention time , process (computing) , electrical engineering , electronic engineering , embedded system , engineering , chemistry , physics , optics , metallurgy , operating system , chromatography

We present an investigation of the process of charging and discharging of the floatinggate of thin oxide Flash EEPROMs based on a fully quantum mechanical approach totransport in the vertical direction. Our approach allows us to compute program, erase,and retention times as a function of the gate stack structure, and applied voltages

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research