Characterization of Defect Traps in SiO2Thin Films | Zendy

JeanYves Rosaye | Zendy; P. Mialhe | Zendy; JeanPierre Charles | Zendy; Mitsuo Sakashita | Zendy; Hiroya Ikeda | Zendy; Akira Sakai | Zendy; Shigeaki Zaima | Zendy; Yukio Yasuda | Zendy

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Characterization of Defect Traps in SiO₂Thin Films

Author(s) -

JeanYves Rosaye,

P. Mialhe,

JeanPierre Charles,

Mitsuo Sakashita,

Hiroya Ikeda,

Akira Sakai,

Shigeaki Zaima,

Yukio Yasuda

Publication year - 2001

Publication title -

active and passive electronic components

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.144

H-Index - 22

eISSN - 1026-7034

pISSN - 0882-7516

DOI - 10.1155/2001/57872

Subject(s) - materials science , characterization (materials science) , hysteresis , capacitance , stoichiometry , semiconductor , optoelectronics , oxide , degradation (telecommunications) , voltage , work (physics) , thin film , engineering physics , electronic engineering , analytical chemistry (journal) , electrical engineering , nanotechnology , condensed matter physics , chemistry , electrode , metallurgy , engineering , mechanical engineering , physics , organic chemistry , chromatography

In order to understand the degradation of the electrical operations of metal-oxide-semiconductor(MOS) devices, this work is concerned by the defects generation processes in the non-stoichiometric SiOx, area and at the SiO2 interface. For this purpose, a new measurement technique to study slow-state traps and their relationship with fast-state traps is developed. This method considers capacitance-voltagemeasurements and temperature effects during the hysteresis cycle

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