Hot Electron Modelling of HEMTs | Zendy

E. A. B. Cole | Zendy; C.M. Snowden | Zendy; Shahzad Hussain | Zendy

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Hot Electron Modelling of HEMTs

Author(s) -

E. A. B. Cole,

C.M. Snowden,

Shahzad Hussain

Publication year - 2001

Publication title -

vlsi design

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.123

H-Index - 24

eISSN - 1065-514X

pISSN - 1026-7123

DOI - 10.1155/2001/57564

Subject(s) - high electron mobility transistor , conduction band , electron , enhanced data rates for gsm evolution , hot electron , poisson's equation , condensed matter physics , energy (signal processing) , thermal conduction , poisson distribution , electronic band structure , materials science , physics , mathematics , mathematical analysis , quantum mechanics , engineering , transistor , telecommunications , statistics , voltage

The hot-electron two-dimensional HEMT with recessed gate is modelled by solving the Poisson, current continuity and energy transport equations consistently with the Schrodinger equation using a finite difference scheme. New expressions are used for the energy densities inside and outside the quantum wells. A method is described for pinning the conduction band at the contact edge to produce an extremely stable numerical solution. Results are presented for an eight layer GaAs-ALGaAs-InGaAs device.

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