Degradation of Junction Parameters of an Electrically Stressed NPN Bipolar Transistor | Zendy

N. Toufik | Zendy; F. Pélanchon | Zendy; P. Mialhe | Zendy

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Degradation of Junction Parameters of an Electrically Stressed NPN Bipolar Transistor

Author(s) -

N. Toufik,

F. Pélanchon,

P. Mialhe

Publication year - 2001

Publication title -

active and passive electronic components

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.144

H-Index - 22

eISSN - 1026-7034

pISSN - 0882-7516

DOI - 10.1155/2001/53209

Subject(s) - bipolar junction transistor , degradation (telecommunications) , materials science , stress (linguistics) , transistor , common emitter , heterostructure emitter bipolar transistor , optoelectronics , current (fluid) , junction temperature , electrical engineering , voltage , power (physics) , engineering , physics , linguistics , philosophy , quantum mechanics

The effect of an electrical ageing on npn bipolar transistor has been studied. The currentgain decreases substantially and the electrical properties are discussed. The emitter-basejunction parameters are degraded during the electrical stress experiments. Both theamplitude and the rate of this degradation depend on the stress duration. Theevaluation of these parameters allows to discuss hot carrier degradation process, toestimate the stress magnitude and to control the device

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