Simulation of Submicron Silicon Diodeswith a Non‐Parabolic Hydrodynamical Model Basedon the Maximum Entropy Principle | Zendy

Orazio Muscato | Zendy; Vittorio Romano | Zendy

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Simulation of Submicron Silicon Diodeswith a Non‐Parabolic Hydrodynamical Model Basedon the Maximum Entropy Principle

Author(s) -

Orazio Muscato,

Vittorio Romano

Publication year - 2001

Publication title -

vlsi design

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.123

H-Index - 24

eISSN - 1065-514X

pISSN - 1026-7123

DOI - 10.1155/2001/52981

Subject(s) - principle of maximum entropy , silicon , statistical physics , entropy (arrow of time) , materials science , mathematics , computational physics , mechanics , physics , thermodynamics , metallurgy , statistics

A hydrodynamical model for electron transport in silicon semiconductors, free of anyfitting parameters, has been formulated in [1,2] on the basis of the maximum entropyprinciple, by considering the energy band described by the Kane dispersion relation andby including electron-non polar optical phonon and electron-acoustic phononscattering

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