Open AccessAn Accurate Method for Extracting the Critical Field in Short Channel NMOS Devices
Author(s) -
Y. Amhouche,
A. Abbassi,
Khalid Rais,
R. Rmaily
Publication year - 2001
Publication title -
active and passive electronic components
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.144
H-Index - 22
eISSN - 1026-7034
pISSN - 0882-7516
DOI - 10.1155/2001/49537
Subject(s) - algorithm , computer science
In this letter, an accurate method for extracting the critical field Ec in short channelMOSFET's is presented. The principle of this method is based on the comparisonbetween two models which give drain saturation voltage evolution against gatevoltage Vdsat(Vg) continuously. The results obtained by this technique have shownbetter agreement with measurements data and have allow in the same time todetermine the validity domain of Sodini's law [1]
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