Open AccessMicroscopic Modeling of GaN-based Heterostructures
Author(s) -
F. Sacconi,
Fabio Della Sala,
Aldo Di Carlo,
Paolo Lugli
Publication year - 2001
Publication title -
vlsi design
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.123
H-Index - 24
eISSN - 1065-514X
pISSN - 1026-7123
DOI - 10.1155/2001/47013
Subject(s) - high electron mobility transistor , heterojunction , nanostructure , materials science , optoelectronics , quantum , electronic engineering , effective mass (spring–mass system) , biological system , nanotechnology , computer science , physics , engineering , quantum mechanics , biology , transistor , voltage
Self-consistent quantum modeling of GaN-based nanostructure are presented. Thetight-binding approach is used to calculate optical properties while optimized effectivemass approaches are used to obtain the output characteristics of GaN HEMT
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