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Focused Ion Beam MOSFETs (FIBMOS) demonstrate large enhancements in core deviceperformance areas such as output resistance, hot electron reliability and voltage stabilityupon channel length or drain voltage variation. In this work, we describe an optimizationtechnique for FIBMOS threshold voltage characterization using the 2D Silvaco ATLASsimulator. Both ATLAS and 2D Monte Carlo particle-based simulations were used toshow that FIBMOS devices exhibit enhanced current drive capabilities when compared tonormal MOSFETs. It was also found that the device performance is very much dependentupon the FIB implant profile. High and narrow doping of the FIB implant leads to highdrain current and low hot carrier reliability, whereas low and wide doping gives rise tolower drain current and higher hot carrier reliability

Optimization of FIBMOS Through 2D Silvaco ATLAS and 2D Monte Carlo Particle-based Device Simulations