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Fluctuation effects are becoming important in advanced VLSI devices because of theirincreasing impact on circuit performance and chip yields. Accurate modelling of theseeffects generally requires full 3D simulation, which is used here to analyse four of theprimary such effects. Polysilicon line edge roughness causes excess device leakage, whichcan be reduced at the cost of decreased performance. Phase-shift mask defects canreduce current drive and increase capacitance. Random dopant fluctuation, whichcauses variation in threshold voltage, is evaluated for three technology generations andit is shown that proper tip scaling can reduce these variations. Finally, a study of alphaparticle strikes evaluates the effectiveness of SOI in improving soft error reliability

3D Modelling of Fluctuation Effects in Highly Scaled VLSI Devices