A Percolative Approach to Reliability of Thin Film Interconnects and Ultra-thin Dielectrics | Zendy

C. Pennetta | Zendy; L. Reggiani | Zendy; Gy. Trefán | Zendy; Rosella Cataldo | Zendy; Giorgio De Nunzio | Zendy

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A Percolative Approach to Reliability of Thin Film Interconnects and Ultra-thin Dielectrics

Author(s) -

C. Pennetta,

L. Reggiani,

Gy. Trefán,

Rosella Cataldo,

Giorgio De Nunzio

Publication year - 2001

Publication title -

vlsi design

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.123

H-Index - 24

eISSN - 1065-514X

pISSN - 1026-7123

DOI - 10.1155/2001/38657

Subject(s) - resistor , materials science , percolation (cognitive psychology) , thin film , reliability (semiconductor) , degradation (telecommunications) , dielectric , electronic engineering , optoelectronics , condensed matter physics , electrical engineering , nanotechnology , engineering , physics , thermodynamics , power (physics) , voltage , neuroscience , biology

Degradation of thin film interconnects and ultra-thin dielectrics is studied within astochastic approach based on a percolation technique. The thin film is modelled as atwo-dimensional random resistor network at a given temperature and its degradation ischaracterized by a breaking probability of the single resistor. A recovery of the damageis also allowed so that a steady-state condition can be achieved. The main featuresof experiments are reproduced. This approach provides a unified description ofdegradation and failure processes in terms of physical parameters

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