A Generalized Finite Element Method for Hydrodynamic Modeling of Short-channel Devices | Zendy

Min Shen | Zendy; MingC. Cheng | Zendy; Juin J. Liou | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

A Generalized Finite Element Method for Hydrodynamic Modeling of Short-channel Devices

Author(s) -

Min Shen,

MingC. Cheng,

Juin J. Liou

Publication year - 2001

Publication title -

vlsi design

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.123

H-Index - 24

eISSN - 1065-514X

pISSN - 1026-7123

DOI - 10.1155/2001/36165

Subject(s) - finite element method , robustness (evolution) , mesfet , channel (broadcasting) , fluid dynamics , extended finite element method , computer science , mixed finite element method , electronic engineering , mathematics , engineering , mechanics , physics , structural engineering , electrical engineering , transistor , telecommunications , field effect transistor , biochemistry , chemistry , voltage , gene

A finite element method based on the least-squares scheme is developed for hydrodynamicsimulation of two-dimensional short-channel semiconductor devices. Althoughthis general-purpose finite element method has been shown in fluid dynamics to be moreuniversal to flow problems than other finite element approaches and has been applied inrecent years to a wide range of problems in fluid dynamics, it is still unfamiliar to thesemiconductor device community. Application of the developed hydrodynamic leastsquares finite element method (LSFEM) to simulation of a 2D MESFET with a deep-submicrongate has demonstrated its robustness and effectiveness for the hydrodynamicdevice simulation

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research