Approximation of the BTE by a Relaxation-time Operator: Simulations for a 50 nm-channel Si Diode | Zendy

Marcello Anile | Zendy; José A. Carrillo | Zendy; Irene M. Gamba | Zendy; ChiWang Shu | Zendy

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Approximation of the BTE by a Relaxation-time Operator: Simulations for a 50 nm-channel Si Diode

Author(s) -

Marcello Anile,

José A. Carrillo,

Irene M. Gamba,

ChiWang Shu

Publication year - 2001

Publication title -

vlsi design

Language(s) - English

Resource type - Journals

eISSN - 1065-514X

pISSN - 1026-7123

DOI - 10.1155/2001/35094

Subject(s) - dimensionless quantity , ballistic conduction , relaxation (psychology) , statistical physics , physics , computational physics , work (physics) , drift velocity , mechanics , electric field , quantum mechanics , psychology , social psychology , electron

In this work we present comparisons between DSMC simulations of the full BTEand deterministic simulations of a relaxation-time approximation for a nowadays sizeSi diode. We assume a eld dependent relaxation time tted to give the same driftspeed (mean velocity) as DSMC simulations for bulk Si. We compute the density,mean velocity, force eld, potential drop, energy and I-V curves of both models andplot the pdf of the deterministic relaxation-time model. We also compare the resultsto...

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