GaAs Triac-like Triangular Barrier Switch Prepared by Molecular Beam Epitaxy | Zendy

M. R. Lef | Zendy; K. F. Yarn | Zendy; C. C. Chen | Zendy; W. R. Chang | Zendy

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GaAs Triac-like Triangular Barrier Switch Prepared by Molecular Beam Epitaxy

Author(s) -

M. R. Lef,

K. F. Yarn,

C. C. Chen,

W. R. Chang

Publication year - 2000

Publication title -

active and passive electronic components

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.144

H-Index - 22

eISSN - 1026-7034

pISSN - 0882-7516

DOI - 10.1155/2001/29392

Subject(s) - triac , molecular beam epitaxy , optoelectronics , transistor , materials science , current (fluid) , cathode , voltage , bipolar junction transistor , epitaxy , electrical engineering , nanotechnology , engineering , layer (electronics)

A new S-shaped negative differential resistance (NDR) switching device, prepared bymolecular beam epitaxy (MBE), has been successfully developed in a GaAs doubletriangular barrier structure. Symmetrical bidirectional S-shaped NDR characteristics areobserved experimentally. The bidirectional current-voltage (I–V) characteristics exhibita new type of NDR caused by an avalanche multiplication process in reverse biasedbase-collector region and barrier redistribution. Under a base current injection withrespect to the cathode, the device exhibits a conventional transistor with a current gainof 1.2 at room temperature. The experimentally electrical results can be easily understoodby an equivalent circuit. In addition, a new optoelectronic switching device is alsoproposed which may have the potential for bidirectional wave length emission

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