Simulation of 0.35 μm/0.25 μm CMOS Technology Doping Profiles | Zendy

M. Lorenzini | Zendy; L. Haspeslagh | Zendy; Jan Van Houdt | Zendy; H.E. Maes | Zendy

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Simulation of 0.35 μm/0.25 μm CMOS Technology Doping Profiles

Author(s) -

M. Lorenzini,

L. Haspeslagh,

Jan Van Houdt,

H.E. Maes

Publication year - 2001

Publication title -

vlsi design

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.123

H-Index - 24

eISSN - 1065-514X

pISSN - 1026-7123

DOI - 10.1155/2001/28105

Subject(s) - cmos , calibration , dopant , set (abstract data type) , doping , process (computing) , computer science , electronic engineering , materials science , optoelectronics , engineering , mathematics , statistics , programming language , operating system

A careful calibration of a continuum process simulator is normally required to achieve agood agreement between simulated results and experimental dopant profiles. However,the validity of such a calibration procedure is often limited to a particular technology.By taking into account a number of physics-based models and experimental resultsavailable in literature, the predicting capability of the process simulation has beenconveniently improved. In particular, this paper shows how concentration-depthprofiles from two different CMOS technologies have been successfully reproduced witha unique set of fitting parameters

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