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A careful calibration of a continuum process simulator is normally required to achieve agood agreement between simulated results and experimental dopant profiles. However,the validity of such a calibration procedure is often limited to a particular technology.By taking into account a number of physics-based models and experimental resultsavailable in literature, the predicting capability of the process simulation has beenconveniently improved. In particular, this paper shows how concentration-depthprofiles from two different CMOS technologies have been successfully reproduced witha unique set of fitting parameters

Simulation of 0.35 μm/0.25 μm CMOS Technology Doping Profiles