Impact of the Stress on the Sub-Micron N-Metal Oxide Semiconductor Field Effect Transistor Characteristics | Zendy

R. Marrakh | Zendy; A. Bouhdada | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Impact of the Stress on the Sub-Micron N-Metal Oxide Semiconductor Field Effect Transistor Characteristics

Author(s) -

R. Marrakh,

A. Bouhdada

Publication year - 2001

Publication title -

active and passive electronic components

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.144

H-Index - 22

eISSN - 1026-7034

pISSN - 0882-7516

DOI - 10.1155/2001/18731

Subject(s) - transconductance , mosfet , materials science , stress (linguistics) , field effect transistor , transistor , current (fluid) , optoelectronics , degradation (telecommunications) , charge density , electronic engineering , electrical engineering , engineering , physics , voltage , linguistics , philosophy , quantum mechanics

In this paper, we present a drain current model for stressed short-channel MOSFET's.Stress conditions are chosen so that the interface states generated by hot-carriers aredominant. The defects generated during stress time are simulated by a spatio-temporalgaussian distribution. The parasitic source and drain resistances are included. We alsoinvestigate the impact of the interface charge density, generated during stress, on thetransconductance. Simulation results show a significant degradation of the draincurrent versus stress time

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research