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In this paper, we present a drain current model for stressed short-channel MOSFET's.Stress conditions are chosen so that the interface states generated by hot-carriers aredominant. The defects generated during stress time are simulated by a spatio-temporalgaussian distribution. The parasitic source and drain resistances are included. We alsoinvestigate the impact of the interface charge density, generated during stress, on thetransconductance. Simulation results show a significant degradation of the draincurrent versus stress time

Impact of the Stress on the Sub-Micron N-Metal Oxide Semiconductor Field Effect Transistor Characteristics