Three-dimensional Statistical Modeling of the Effects of the Random Distribution of Dopants in Deep Sub-micron nMOSFETs | Zendy

E. Amirante | Zendy; Giuseppe Iannaccone | Zendy; B. Pellegrini | Zendy

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Three-dimensional Statistical Modeling of the Effects of the Random Distribution of Dopants in Deep Sub-micron nMOSFETs

Author(s) -

E. Amirante,

Giuseppe Iannaccone,

B. Pellegrini

Publication year - 2001

Publication title -

vlsi design

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.123

H-Index - 24

eISSN - 1065-514X

pISSN - 1026-7123

DOI - 10.1155/2001/16196

Subject(s) - materials science , threshold voltage , dopant , mosfet , poisson distribution , doping , standard deviation , statistical physics , voltage , electronic engineering , mathematics , optoelectronics , physics , statistics , electrical engineering , transistor , engineering

We have performed a three-dimensional statistical simulation of the threshold voltagedistribution of deep submicron nMOSFETs, as a function of gate length, dopingdensity, oxide thickness, based on a multigrid non-linear Poisson solver. We compareour results with statistical simulations presented in the literature, and show thatessentially only the vertical distribution of dopants has an effect on the standarddeviation of the threshold voltage

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