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We have performed a three-dimensional statistical simulation of the threshold voltagedistribution of deep submicron nMOSFETs, as a function of gate length, dopingdensity, oxide thickness, based on a multigrid non-linear Poisson solver. We compareour results with statistical simulations presented in the literature, and show thatessentially only the vertical distribution of dopants has an effect on the standarddeviation of the threshold voltage

Three-dimensional Statistical Modeling of the Effects of the Random Distribution of Dopants in Deep Sub-micron nMOSFETs