Simulation of Widebandgap Multi-Quantum Well Light Emitting Diodes | Zendy

D. Oriato | Zendy; Alison Walker | Zendy; W. N. Wang | Zendy

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Simulation of Widebandgap Multi-Quantum Well Light Emitting Diodes

Author(s) -

D. Oriato,

Alison Walker,

W. N. Wang

Publication year - 2001

Publication title -

vlsi design

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.123

H-Index - 24

eISSN - 1065-514X

pISSN - 1026-7123

DOI - 10.1155/2001/14941

Subject(s) - quantum tunnelling , diode , light emitting diode , optoelectronics , quantum , electron , poisson's equation , lattice (music) , nitride , materials science , quantum efficiency , physics , condensed matter physics , quantum mechanics , nanotechnology , layer (electronics) , acoustics

Charge transport has been simulated in a novel two quantum well InGaN/GaN light emitting diode. Asymmetric tunnelling for holes and electrons has been used to enhance the quantum efficiency of the diode, A self-consistent solution of Poisson and Schrodinger equations has been used to obtain the band profile, energy levels and wave functions. Transport in the bulk nitride has been simulated by a drift diffusion model. Lattice strain and the resulting piezoelectric field effects have been shown to influence the device characteristics

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