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Operation Principle of Resonant Tunneling THz Oscillator at Fixed Bias Voltages
Author(s) -
PeiJi Zhao,
HongLiang Cui,
Dwight Woolard,
Fliex Buot
Publication year - 2001
Publication title -
vlsi design
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.123
H-Index - 24
eISSN - 1065-514X
pISSN - 1026-7123
DOI - 10.1155/2001/12624
Subject(s) - quantum tunnelling , terahertz radiation , biasing , coupling (piping) , voltage , physics , energy (signal processing) , quantum , quantum mechanics , materials science , metallurgy
Based on time-dependent numerical simulation of an double barrier quantum wellstructure, a time-dependent energy coupling model is presented to account for theoperational principle of a new kind of resonant tunneling THz oscillators

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