The Chapman-Enskog Expansion and the Quantum Hydrodynamic Model for Semiconductor Devices | Zendy

Carl L. Gardner | Zendy; Christian Ringhofer | Zendy

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The Chapman-Enskog Expansion and the Quantum Hydrodynamic Model for Semiconductor Devices

Author(s) -

Carl L. Gardner,

Christian Ringhofer

Publication year - 1999

Publication title -

vlsi design

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.123

H-Index - 24

eISSN - 1065-514X

pISSN - 1026-7123

DOI - 10.1155/2000/91289

Subject(s) - classification of discontinuities , quantum , quantum hydrodynamics , semiconductor , semiconductor device , physics , heterojunction , boltzmann constant , statistical physics , quantum mechanics , mathematics , materials science , mathematical analysis , nanotechnology , layer (electronics)

A "smooth" quantum hydrodynamic (QHD) model for semiconductor devices is derived by a Chapman-Enskog expansion of the Wigner-Boltzmann equation which can handle in a mathematically rigorous way the discontinuities in the classical potential energy which occur at heterojunction barriers in quantum semiconductor devices. A dispersive quantum contribution to the heat flux term in the QHD model is introduced.

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