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A method for device characterization is experimented to qualify the relaxable damage in hot-carrier stressing of n -MOS transistors. The degradation of physical parameters of the body-drain junction of power HEXFETs is presented for applied stress condition    V  g    =    V  d    /2. Large decrease of the resistance series, of the ideality factor, and of the reverse recombination current are shown to be related to relaxation time, and are significant at    V  g    =–    V  d    . These effects are discussed and explained by the evolution of the interface states.

Relaxable Damage in Hot-Carrier Stressing ofn-MOS Transistors