Relaxable Damage in Hot-Carrier Stressing ofn-MOS Transistors

A method for device characterization is experimented to qualify the relaxable damage in hot-carrier stressing of n -MOS transistors. The degradation of physical parameters of the body-drain junction of power HEXFETs is presented for applied stress condition V g = V d /2. Large decrease of the resistance series, of the ideality factor, and of the reverse recombination current are shown to be related to relaxation time, and are significant at V g =– V d . These effects are discussed and explained by the evolution of the interface states.