Open AccessAn Analytical, Temperature-dependent Model for Majority- and Minority-carrier Mobility in Silicon Devices
Author(s) -
Susanna Reggiani,
M. Valdinoci,
L. Colalongo,
M. Rudan,
G. Baccarani
Publication year - 1999
Publication title -
vlsi design
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.123
H-Index - 24
eISSN - 1065-514X
pISSN - 1026-7123
DOI - 10.1155/2000/52147
Subject(s) - saturation velocity , silicon , velocity saturation , doping , boltzmann constant , mobility model , saturation current , electron mobility , materials science , solver , technology cad , electric field , field (mathematics) , engineering physics , statistical physics , computational physics , optoelectronics , computer science , condensed matter physics , cad , mosfet , physics , electrical engineering , engineering , drift velocity , mathematics , transistor , thermodynamics , voltage , telecommunications , quantum mechanics , engineering drawing , programming language , pure mathematics
A new analytical model for carrier mobility in silicon is presented, which is strongly oriented to CAD and suitable for implementation in device simulators. The effects of the electric field, temperature, and doping concentration are accounted for. In particular, the model unifies the descriptions of majority- and minority-carrier mobility and includes the full temperature dependence. The effects of a high longitudinal field are included in the conventional velocity-saturation form; the doping dependence is also incorporated in the latter. The model has been worked out starting from a preliminary investigation using a Boltzmann solver, and has been validated by a number of comparisons with published experiments on silicon.
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