A New Method for the Extraction of Diode Parameters Using a Single Exponential Model | Zendy

Samira Dib | Zendy; M. de la Bardonnie | Zendy; A. Khoury | Zendy; F. Pélanchon | Zendy; P. Mialhe | Zendy

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A New Method for the Extraction of Diode Parameters Using a Single Exponential Model

Author(s) -

Samira Dib,

M. de la Bardonnie,

A. Khoury,

F. Pélanchon,

P. Mialhe

Publication year - 1999

Publication title -

active and passive electronic components

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.144

H-Index - 22

eISSN - 1026-7034

pISSN - 0882-7516

DOI - 10.1155/2000/31390

Subject(s) - diode , common emitter , exponential function , voltage , line (geometry) , topology (electrical circuits) , mathematics , electronic engineering , algorithm , mathematical analysis , physics , computational physics , computer science , optoelectronics , engineering , electrical engineering , geometry , combinatorics

A new method for extracting junction parameters of the single diode model is presented.A least squares method approach considers the deviation ∆V=f(I) between theexperimental current-voltage (I-V) characteristic and a theoretical arbitrary characteristic.A specific case- the ∆V graph reducing to a straight line–is identified and theknowledge of the slope and of the intercept with the ordinate axis leads to the determinationof the junction parameters. The method is applied to the characterization ofthe emitter-base junction of transistors and the results are discussed

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