Three-Dimensional Modelling and Simulation Theory of Field Effect Devices | Zendy

M. N. Doja | Zendy; Moinuddin Moinuddin | Zendy; Umesh Kumar | Zendy

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Three-Dimensional Modelling and Simulation Theory of Field Effect Devices

Author(s) -

M. N. Doja,

Moinuddin Moinuddin,

Umesh Kumar

Publication year - 1998

Publication title -

active and passive electronic components

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.144

H-Index - 22

eISSN - 1026-7034

pISSN - 0882-7516

DOI - 10.1155/1999/96474

Subject(s) - semiconductor device , mosfet , computer science , semiconductor , voltage , electronic engineering , chip , engineering , electrical engineering , materials science , transistor , nanotechnology , telecommunications , layer (electronics)

In recent years, semiconductor manufacturers have been able to steadily reduce thephysical area required by devices, thus allowing an increasing number of circuit functionson a single chip. Smaller semiconductor devices require more detailed and accurateanalysis because minor errors can degrade their performance substantially

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