High Speed Non-Linear Circuit Simulation of Bipolar Junction Transistors | Zendy

M. N. Doja | Zendy; Moinuddin Moinuddin | Zendy; Umesh Kumar | Zendy

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High Speed Non-Linear Circuit Simulation of Bipolar Junction Transistors

Author(s) -

M. N. Doja,

Moinuddin Moinuddin,

Umesh Kumar

Publication year - 1998

Publication title -

active and passive electronic components

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.144

H-Index - 22

eISSN - 1026-7034

pISSN - 0882-7516

DOI - 10.1155/1999/58424

Subject(s) - bipolar junction transistor , transistor , equivalent circuit , discrete circuit , transient (computer programming) , transistor model , electronic engineering , computer science , electronic circuit simulation , multiple emitter transistor , electrical engineering , electronic circuit , engineering , voltage , field effect transistor , operating system

This paper presents HIBTRA (High Speed Bipolar Transistor Analysis), a high speednon-linear bipolar transistor circuit simulation package. The paper discusses about themodelling of Bipolar Junction Transistor operated at high speed in the sinusoidal smallsignal and the transient region of operations. The package uses a high frequency modelnon-linear circuit elements for accurate analysis. The package also uses transistor'slumped circuit model to calculate devices electrical parameters, and it also does dynamicsimulation. It also includes the conventional model as a special case. Model verificationhas also been done by simulation

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