Influence of BJT Transit Frequency Limit Relation to MOSFET Parameters on the Switching Speed of BiCMOS Digital Circuits | Zendy

A. Srivastava | Zendy

Open Access

Influence of BJT Transit Frequency Limit Relation to MOSFET Parameters on the Switching Speed of BiCMOS Digital Circuits

Author(s) -

A. Srivastava

Publication year - 1997

Publication title -

vlsi design

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.123

H-Index - 24

eISSN - 1065-514X

pISSN - 1026-7123

DOI - 10.1155/1999/52841

Subject(s) - bicmos , bipolar junction transistor , spice , electronic engineering , limit (mathematics) , electronic circuit , mosfet , electrical engineering , engineering , transistor , mathematics , voltage , mathematical analysis

The use is made of the BJT transit frequency limit (fTL) dependence on the MOSFET parameters (L, Vth) to design BiCMOS digital circuits. The fTL relation is used in conjunction with the established BiCMOS gate delay models. It is shown that the minimum delay BiCMOS circuits driving the large capacitive load, can be designed at the transit frequency limit with the reduced BJT AREA factor. The time delay calculations are presented for a typical BiCMOS circuit and comparison is made with the results simulated using SPICE.

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