2D Finite Element Method Simulation of Lateral Resonant Tunneling Devices | Zendy

Zhi-an Shao | Zendy; Wolfgang Porod | Zendy; Craig S. Lent | Zendy

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2D Finite Element Method Simulation of Lateral Resonant Tunneling Devices

Author(s) -

Zhi-an Shao,

Wolfgang Porod,

Craig S. Lent

Publication year - 1998

Publication title -

vlsi design

Language(s) - English

Resource type - Journals

eISSN - 1065-514X

pISSN - 1026-7123

DOI - 10.1155/1998/97564

Subject(s) - antiresonance , quantum tunnelling , finite element method , resonator , resonance (particle physics) , transmission (telecommunications) , transmission channel , materials science , current (fluid) , channel (broadcasting) , optoelectronics , physics , electrical engineering , engineering , structural engineering , atomic physics

Using the finite element method, we investigate device applications of lateral resonant tunnelingstructures which consist of a transmission channel with attached resonators. Suchstructure exhibits resonance-antiresonance transmission features which may be engineered toachieve desired device properties.We show that the valley current can be reduced in such 2D lateral resonant tunnelingdevices, resulting in an improved current peak-to-valley ratio

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