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Using the finite element method, we investigate device applications of lateral resonant tunnelingstructures which consist of a transmission channel with attached resonators. Suchstructure exhibits resonance-antiresonance transmission features which may be engineered toachieve desired device properties.We show that the valley current can be reduced in such 2D lateral resonant tunnelingdevices, resulting in an improved current peak-to-valley ratio

2D Finite Element Method Simulation of Lateral Resonant Tunneling Devices