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A Hydrodynamic Model for Transport in Semiconductors without Free Parameters
Author(s) -
Paolo Falsaperla,
M. Trovato
Publication year - 1998
Publication title -
vlsi design
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.123
H-Index - 24
eISSN - 1065-514X
pISSN - 1026-7123
DOI - 10.1155/1998/97416
Subject(s) - statistical physics , distribution function , computation , range (aeronautics) , monte carlo method , kinetic monte carlo , entropy (arrow of time) , physics , principle of maximum entropy , function (biology) , mechanics , computational physics , materials science , thermodynamics , mathematics , algorithm , statistics , evolutionary biology , biology , composite material
We derive, using the Entropy Maximum Principle, an expression for the distributionfunction of carriers as a function of a set of macroscopic quantities (density, velocity,energy, deviatoric stress, energy flux). Given the distribution function, we obtain, forthese macroscopic quantities, a hydrodynamic model in which all the constitutivefunctions (fluxes and collisional productions) are explicitely computed starting fromtheir kinetic expressions. We have applied our model to the simulation of some onedimensionalsubmicron devices in a temperature range of 77–300 K, obtaining resultscomparable with Monte Carlo. Computation times are of order of few seconds for apicosecond of simulation

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