Simulation of Optical Excitation to and Emissionfrom Electron Fabry‐Perot States Subject to StrongInelastic Scattering. | Zendy

Leonard F. Register | Zendy

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Simulation of Optical Excitation to and Emissionfrom Electron Fabry‐Perot States Subject to StrongInelastic Scattering.

Author(s) -

Leonard F. Register

Publication year - 1998

Publication title -

vlsi design

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.123

H-Index - 24

eISSN - 1065-514X

pISSN - 1026-7123

DOI - 10.1155/1998/96493

Subject(s) - inelastic scattering , excitation , physics , fabry–pérot interferometer , scattering , electron , monte carlo method , atomic physics , quasielastic scattering , photon , inelastic collision , computational physics , x ray raman scattering , optics , quantum mechanics , laser , mathematics , statistics

Photon induced carrier excitation to and escape from Fabry-Perot electron states in the presenceof subsequent inelastic scattering is simulated. The Fabry-Perot states exist above aquantum well sandwiched between quarter-wave stacks of potential wells and barriers. Twonumerical methods are used: simulation of inelastic scattering via absorbing (optical) potentials,and simulation via Schrödinger Equation Monte Carlo

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