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Photon induced carrier excitation to and escape from Fabry-Perot electron states in the presenceof subsequent inelastic scattering is simulated. The Fabry-Perot states exist above aquantum well sandwiched between quarter-wave stacks of potential wells and barriers. Twonumerical methods are used: simulation of inelastic scattering via absorbing (optical) potentials,and simulation via Schrödinger Equation Monte Carlo

Simulation of Optical Excitation to and Emission from Electron Fabry-Perot States Subject to Strong Inelastic Scattering.