A β-SiC MOSFET Monte Carlo Simulator Including Inversion Layer Quantization | Zendy

F. Gámiz | Zendy; J.B. Roldán | Zendy; J. A. LópezVillanueva | Zendy

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A β-SiC MOSFET Monte Carlo Simulator Including Inversion Layer Quantization

Author(s) -

F. Gámiz,

J.B. Roldán,

J. A. LópezVillanueva

Publication year - 1998

Publication title -

vlsi design

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.123

H-Index - 24

eISSN - 1065-514X

pISSN - 1026-7123

DOI - 10.1155/1998/94915

Subject(s) - velocity overshoot , monte carlo method , mosfet , saturation velocity , computational physics , electron mobility , inversion (geology) , condensed matter physics , electron , materials science , phonon scattering , drift velocity , scattering , statistical physics , physics , phonon , transistor , optics , quantum mechanics , mathematics , voltage , paleontology , statistics , structural basin , biology

Electron transport properties in SiC quantized inversion layers have been studied bymeans of a Monte Carlo procedure. It has been observed that the contribution of polaropticalphonon scattering produces a significant influence of the effective-electric fieldon the high longitudinal field transport regime, this being the main difference of SiCwith respect to standard Si inversion layers. The energy- and momentum-relaxationtimes have been calculated and the results suggest that electron velocity overshooteffects are less important than in Si MOSFETs. The electron mobility is not verydifferent from their silicon counterparts, but the saturation velocity is higher

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