Open AccessElectron Mobility and Monte Carlo device simulation of MOSFETs
Author(s) -
Shuji Yamakawa,
Hideki Ueno,
Kenji Taniguchi,
Chihiro Hamaguchi,
K. Miyatsuji,
Kazuo Masaki,
Umberto Ravaioli
Publication year - 1998
Publication title -
vlsi design
Language(s) - English
Resource type - Journals
eISSN - 1065-514X
pISSN - 1026-7123
DOI - 10.1155/1998/92737
Subject(s) - scattering , mosfet , monte carlo method , electron mobility , surface roughness , phonon scattering , condensed matter physics , electron , computational physics , autocovariance , exponential function , electron scattering , physics , materials science , phonon , statistical physics , voltage , transistor , optics , quantum mechanics , mathematics , mathematical analysis , statistics , fourier transform
The electron mobility in the inversion layer of a MOSFET, formed on the (100) silicon surface,is calculated by using a Monte Carlo approach which takes into account size quantization,acoustic phonon scattering, intervalley phonon scattering and surface roughnessscattering. Degeneracy is also considered because it is important at higher normal effectivefields (high gate voltages). The main emphasis is placed on the influence of the specific autocovariancefunction, used to describe the surface roughness, on the electron mobility. It isfound that the electron mobility calculated with roughness scattering rates based on the exponentialfunction shows a good agreement with experiments. Device simulation of a MOSFETis carried out to demonstrate the usefulness of the present model, where 3D electron states aretaken into account in addtion to the 2D electron states
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