Open AccessSimulation of Quantum‐Dot Structures in Si/SiO2
Author(s) -
Minhan Chen,
Wolfgang Porod
Publication year - 1998
Publication title -
vlsi design
Language(s) - English
Resource type - Journals
eISSN - 1065-514X
pISSN - 1026-7123
DOI - 10.1155/1998/89258
Subject(s) - quantum dot , poisson's equation , electron , charge (physics) , condensed matter physics , physics , materials science , nanotechnology , quantum mechanics
We present numerical simulations for the design of gated few-electron quantum dot structuresin the Si/SiO2 material system. Because of the vicinity of the quantum dots to the exposedsurface, we take special care in treating the boundary conditions at the oxide/vacuum interfaces.In our simulations, the confining potential is obtained from the Poisson equation with aThomas-Fermi charge model. We find that the dot occupancy can be effectively controlled inthe few-electron regime
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