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We present numerical simulations for the design of gated few-electron quantum dot structuresin the Si/SiO2 material system. Because of the vicinity of the quantum dots to the exposedsurface, we take special care in treating the boundary conditions at the oxide/vacuum interfaces.In our simulations, the confining potential is obtained from the Poisson equation with aThomas-Fermi charge model. We find that the dot occupancy can be effectively controlled inthe few-electron regime

Simulation of Quantum-Dot Structures in Si/SiO2

Simulation of Quantum-Dot Structures in Si/SiO₂