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The well known Brooks-Herring (BH) formula for charged-impurity (CI) scattering overestimatesthe mobility of electrons in highly doped semiconductors. The BH approach relies on astatic, single-site description of the carrier-impurity interactions neglecting many-particleeffects. We propose a physically based charged-impurity scattering model including Fermi-Dirac statistics, dispersive screening, and two-ion scattering. An approximation for the dielectricfunction is made to avoid numerical integrations. The resulting scattering rate formulasare analytical. Monte Carlo calculations were performed for majority electrons in bulk siliconat 300 K with impurity concentrations from 1015 cm3 to 1021 cm3

An Improved Ionized Impurity Scattering Model for Monte Carlo Calculations