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This paper presents a numerical study of single-electron resonant tunnelling (RT) assisted bya few ionised donors in a laterally-confined resonant tunnelling diode (LCRTD). The 3Dmulti-mode S-matrix simulation is performed newly introducing the scattering potential ofdiscrete impurities. With a few ionised donors being placed, the calculated energy-dependenceof the total transmission rate shows new resonances which are donor-configurationdependent. Visualised electron probability density reveals that these resonances originate inRT via single-donor-induced localised states. The I-V characteristics show current steps oforder 0.1 nA per donor before the main current peak, which is quantitatively in good agreementwith the experimental results

Three-Dimensional S-Matrix Simulation of Single-Electron Resonant Tunnelling Through Random Ionised Donor States