Three‐Dimensional S‐Matrix Simulation ofSingle‐Electron Resonant Tunnelling Through RandomIonised Donor States | Zendy

Hiroshi Mizuta | Zendy

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Three‐Dimensional S‐Matrix Simulation ofSingle‐Electron Resonant Tunnelling Through RandomIonised Donor States

Author(s) -

Hiroshi Mizuta

Publication year - 1998

Publication title -

vlsi design

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.123

H-Index - 24

eISSN - 1065-514X

pISSN - 1026-7123

DOI - 10.1155/1998/85748

Subject(s) - quantum tunnelling , scattering , electron , atomic physics , diode , physics , electron scattering , matrix (chemical analysis) , resonant tunneling diode , condensed matter physics , chemistry , quantum mechanics , quantum well , laser , chromatography

This paper presents a numerical study of single-electron resonant tunnelling (RT) assisted bya few ionised donors in a laterally-confined resonant tunnelling diode (LCRTD). The 3Dmulti-mode S-matrix simulation is performed newly introducing the scattering potential ofdiscrete impurities. With a few ionised donors being placed, the calculated energy-dependenceof the total transmission rate shows new resonances which are donor-configurationdependent. Visualised electron probability density reveals that these resonances originate inRT via single-donor-induced localised states. The I-V characteristics show current steps oforder 0.1 nA per donor before the main current peak, which is quantitatively in good agreementwith the experimental results

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