Modeling Nonlinear and Chaotic Dynamicsin Semiconductor Device Structures | Zendy

Eckehard Schöll | Zendy

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Modeling Nonlinear and Chaotic Dynamicsin Semiconductor Device Structures

Author(s) -

Eckehard Schöll

Publication year - 1998

Publication title -

vlsi design

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.123

H-Index - 24

eISSN - 1065-514X

pISSN - 1026-7123

DOI - 10.1155/1998/84685

Subject(s) - chaotic , semiconductor , nonlinear system , diode , semiconductor device , heterojunction , voltage , physics , statistical physics , materials science , condensed matter physics , optoelectronics , computer science , nanotechnology , quantum mechanics , layer (electronics) , artificial intelligence

We review the modeling and simulation of electrical transport instabilities in semiconductorswith a special emphasis on recent progress in the application to semiconductor microstructures.The following models are treated in detail: (i) The dynamics of current filaments in theregime of low-temperature impurity breakdown is studied. In particular we perform 2D simulationsof the nascence of a filament upon application of a bias voltage. (ii) Vertical electricaltransport in layered semiconductor structures like the heterostructure hot electron diode isconsidered. Periodic as well as chaotic spatio-temporal spiking of the current is obtained. Inparticular we find long transients of spatio-temporal chaos preceding regular spiking

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