Single-Electron Memories
Author(s) -
Christoph Wasshuber,
H. Kosina,
S. Selberherr
Publication year - 1998
Publication title -
vlsi design
Language(s) - English
Resource type - Journals
eISSN - 1065-514X
pISSN - 1026-7123
DOI - 10.1155/1998/83017
Subject(s) - chip , power consumption , memory cell , semiconductor memory , computer science , lithography , power (physics) , materials science , electrical engineering , optoelectronics , computer hardware , physics , engineering , voltage , transistor , quantum mechanics
One of the most promising applications of single-electronics is a single-electron memorychip. Such a chip would have orders of magnitude lower power consumption comparedto state-of-the-art dynamic memories, and would allow integration densities beyond thetera bit chip.We studied various single-electron memory designs. Additionally we areproposing a new memory cell which we call the T-memory cell. This cell can bemanufactured with state-of-the-art lithography, it operates at room temperature andshows a strong resistance against random background charge
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