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A tight-binding models which account for band mixing, strain and external appliedpotentials in a self-consistent fashion has been developed. This allows us to describeelectronic and optical properties of nanostructured devices beyond the usual envelopefunction approximation. This model can be applied to direct and indirect gapsemiconductors thus allowing for instance the self-consistent calculation of band profileand carrier control in pseudomorphic InGaAs/GaAs HEMTs and SiGe/Si MODFETs

Optical and Electronic Properties of Semiconductor 2D Nanosystems: Self-consistent Tight-binding Calculations