Optical and Electronic Properties of Semiconductor 2D Nanosystems: Self-consistent Tight-binding Calculations | Zendy

Andrea Reale | Zendy; Aldo Di Carlo | Zendy; Sara Pescetelli | Zendy; Marco Paciotti | Zendy; Paolo Lugli | Zendy

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Optical and Electronic Properties of Semiconductor 2D Nanosystems: Self-consistent Tight-binding Calculations

Author(s) -

Andrea Reale,

Aldo Di Carlo,

Sara Pescetelli,

Marco Paciotti,

Paolo Lugli

Publication year - 1998

Publication title -

vlsi design

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.123

H-Index - 24

eISSN - 1065-514X

pISSN - 1026-7123

DOI - 10.1155/1998/78272

Subject(s) - tight binding , semiconductor , materials science , optoelectronics , envelope (radar) , band gap , mixing (physics) , condensed matter physics , electronic structure , physics , computer science , quantum mechanics , telecommunications , radar

A tight-binding models which account for band mixing, strain and external appliedpotentials in a self-consistent fashion has been developed. This allows us to describeelectronic and optical properties of nanostructured devices beyond the usual envelopefunction approximation. This model can be applied to direct and indirect gapsemiconductors thus allowing for instance the self-consistent calculation of band profileand carrier control in pseudomorphic InGaAs/GaAs HEMTs and SiGe/Si MODFETs

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