Observation of Anomalous Negative DifferentialResistance in Diode Breakdown Simulation Using CarrierTemperature Dependent Impact Ionization | Zendy

Edwin C. Kan | Zendy; Gyoyoung Jin | Zendy; Zhiping Yu | Zendy; R.W. Dutton | Zendy

Open Access

Observation of Anomalous Negative DifferentialResistance in Diode Breakdown Simulation Using CarrierTemperature Dependent Impact Ionization

Author(s) -

Edwin C. Kan,

Gyoyoung Jin,

Zhiping Yu,

R.W. Dutton

Publication year - 1998

Publication title -

vlsi design

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.123

H-Index - 24

eISSN - 1065-514X

pISSN - 1026-7123

DOI - 10.1155/1998/76350

Subject(s) - impact ionization , diode , materials science , ionization , differential (mechanical device) , carrier lifetime , negative resistance , optoelectronics , atomic physics , computational physics , chemistry , physics , electrical engineering , thermodynamics , engineering , silicon , voltage , ion , organic chemistry

When carrier temperatures are used to model impact ionization with self-consistent coolingeffects, anomalous negative differential resistance (NDR) was found in diode breakdownsimulation. Possible mechanisms responsible for the NDR are analyzed

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