English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

In this paper, we analyze, based on a two-dimensional drift-diffusion simulation, how variationsin the structural components of an InGaAs/InP separate absorption, grading, charge, andmultiplication photodiode (SAGCM) alter its performance. The model is employed in conjunctionwith experimental measurements to enhance the understanding of the device performance.Calibration of the model to the material system and growth technique is performedvia the analysis of a simpler, alternate structure. Excellent agreement between the calculatedresults and experimental measurements of the breakdown voltage, dark current, mesa punchthroughvoltage, photoresponse, and gain are obtained

Macroscopic Device Simulation of InGaAs/InP Based Avalanche Photodiodes