Macroscopic Device Simulation of InGaAs/InP Based Avalanche Photodiodes | Zendy

Joseph W. Parks | Zendy; Kevin F. Brennan | Zendy; L.E. Tarof | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Macroscopic Device Simulation of InGaAs/InP Based Avalanche Photodiodes

Author(s) -

Joseph W. Parks,

Kevin F. Brennan,

L.E. Tarof

Publication year - 1998

Publication title -

vlsi design

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.123

H-Index - 24

eISSN - 1065-514X

pISSN - 1026-7123

DOI - 10.1155/1998/73839

Subject(s) - avalanche photodiode , optoelectronics , materials science , photodiode , voltage , diffusion , breakdown voltage , calibration , optics , detector , electrical engineering , physics , engineering , quantum mechanics , thermodynamics

In this paper, we analyze, based on a two-dimensional drift-diffusion simulation, how variationsin the structural components of an InGaAs/InP separate absorption, grading, charge, andmultiplication photodiode (SAGCM) alter its performance. The model is employed in conjunctionwith experimental measurements to enhance the understanding of the device performance.Calibration of the model to the material system and growth technique is performedvia the analysis of a simpler, alternate structure. Excellent agreement between the calculatedresults and experimental measurements of the breakdown voltage, dark current, mesa punchthroughvoltage, photoresponse, and gain are obtained

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research