Impact Ionization and Hot‐Electron Injection DerivedConsistently from Boltzmann Transport | Zendy

P. Hasler | Zendy; Andreas G. Andreou | Zendy; C. Diorio | Zendy; B.A. Minch | Zendy; Carver Mead | Zendy

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Impact Ionization and Hot‐Electron Injection DerivedConsistently from Boltzmann Transport

Author(s) -

P. Hasler,

Andreas G. Andreou,

C. Diorio,

B.A. Minch,

Carver Mead

Publication year - 1998

Publication title -

vlsi design

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.123

H-Index - 24

eISSN - 1065-514X

pISSN - 1026-7123

DOI - 10.1155/1998/73698

Subject(s) - boltzmann equation , ionization , hot carrier injection , impact ionization , electron , electron ionization , collision , boltzmann constant , hot electron , atomic physics , voltage , channel (broadcasting) , distribution function , electron transport chain , computational physics , materials science , physics , chemistry , ion , nuclear physics , computer science , thermodynamics , electrical engineering , engineering , computer security , transistor , quantum mechanics , biochemistry

We develop a quantitative model of the impact-ionizationand hot-electron–injectionprocesses in MOS devices from first principles. We begin by modeling hot-electrontransport in the drain-to-channel depletion region using the spatially varying Boltzmanntransport equation, and we analytically find a self consistent distribution function in atwo step process. From the electron distribution function, we calculate the probabilitiesof impact ionization and hot-electron injection as functions of channel current, drainvoltage, and floating-gate voltage. We compare our analytical model results tomeasurements in long-channel devices. The model simultaneously fits both the hot-electron-injection and impact-ionization data. These analytical results yield an energydependentimpact-ionization collision rate that is consistent with numerically calculatedcollision rates reported in the literature

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