Open AccessNon Local Impact Ionization Effects in Semiconductor Devices
Author(s) -
Duilio Meglio,
Corrado Cianci,
Aldo Di Carlo,
Paolo Lugli
Publication year - 1998
Publication title -
vlsi design
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.123
H-Index - 24
eISSN - 1065-514X
pISSN - 1026-7123
DOI - 10.1155/1998/72767
Subject(s) - impact ionization , ionization , semiconductor device , monte carlo method , semiconductor , diffusion , process (computing) , materials science , computational physics , statistical physics , electronic engineering , computer science , optoelectronics , physics , engineering , nanotechnology , mathematics , statistics , ion , thermodynamics , quantum mechanics , layer (electronics) , operating system
Impact ionization processes define the breakdown characteristics of semiconductor devices.An accurate description of such phenomenon, however, is limited to very sophisticated devicesimulators such as Monte Carlo. A new physical model for the impact ionization process ispresented, which accounts for dead space effects and high energy carrier transport at a DriftDiffusion level. Such model allows to define universal impact ionization coefficients whichare device-geometry independent. By using available experimental data these parametershave been calculated for In0.53Ga0.47As
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