Open AccessMonte Carlo Calibrated Drift-Diffusion Simulation of Short Channel HFETs
Author(s) -
Asen Asenov,
S. Babiker,
S.P. Beaumont,
John Barker
Publication year - 1998
Publication title -
vlsi design
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.123
H-Index - 24
eISSN - 1065-514X
pISSN - 1026-7123
DOI - 10.1155/1998/72453
Subject(s) - velocity overshoot , monte carlo method , drift velocity , saturation velocity , diffusion , saturation (graph theory) , materials science , channel (broadcasting) , velocity saturation , computational physics , heterojunction , mobility model , electron mobility , electronic engineering , optoelectronics , statistical physics , physics , transistor , mosfet , computer science , engineering , electrical engineering , voltage , electron , mathematics , thermodynamics , telecommunications , nuclear physics , statistics , combinatorics
In this paper we present a methodology to use drift diffusion (DD) simulations in the design of short channel heterojunction FETs (HFETs) with well pronounced velocity overshoot. In the DD simulations the velocity overshoot in the channel is emulated by forcing the saturation velocity in the field dependent mobility model to values corresponding to the average velocity in the channel obtained from Monte Carlo (MC) simulation. To illustrate our approach we compare enhanced DD and MC simulation results for a pseudomorphic HEMTs with 0.12 μm channel length, which are in good agreement. The usefulness of the described methodology is illustrated in a simulation example of self aligned gamma gate pseudomorphic HEMTs. The effect of the gamma gate shape and the self aligned contacts on the overall device performance has been investigated.
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