Transient Analysis of Silicon Devices Using the Hydrodynamic Model | Zendy

L. Colalongo | Zendy; M. Valdinoci | Zendy; A. Gnudi | Zendy; M. Rudan | Zendy

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Transient Analysis of Silicon Devices Using the Hydrodynamic Model

Author(s) -

L. Colalongo,

M. Valdinoci,

A. Gnudi,

M. Rudan

Publication year - 1998

Publication title -

vlsi design

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.123

H-Index - 24

eISSN - 1065-514X

pISSN - 1026-7123

DOI - 10.1155/1998/69105

Subject(s) - transient (computer programming) , overshoot (microwave communication) , velocity overshoot , transient analysis , diode , materials science , silicon , pin diode , mechanics , electronic engineering , computer science , transient response , optoelectronics , engineering , electrical engineering , physics , quantum mechanics , electric field , operating system

The analysis of the switching behaviour of submicron devices brings about the necessity of extending the solution of the hydrodynamic model to the transient case. The implementation of such model has been carried out and a few examples of simulation are presented here, showing the velocity-overshoot of a ballistic diode and the temperature spread in the drain region of a realistic MOS device.

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