Analysis of Hot-Carrier Degradation in Small and Large W/L n-Channel Transistors | Zendy

E. Bendada | Zendy; Khalid Rais | Zendy

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Analysis of Hot-Carrier Degradation in Small and Large W/L n-Channel Transistors

Author(s) -

E. Bendada,

Khalid Rais

Publication year - 1998

Publication title -

active and passive electronic components

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.144

H-Index - 22

eISSN - 1026-7034

pISSN - 0882-7516

DOI - 10.1155/1998/69085

Subject(s) - degradation (telecommunications) , channel (broadcasting) , equivalent series resistance , optoelectronics , transistor , materials science , current (fluid) , layer (electronics) , recombination , electrical engineering , chemistry , engineering , nanotechnology , voltage , gene , biochemistry

Device degradation due to hot-carrier in n-channel HEXFETs is shown to be related tothe device geometrical structure. The form of I-V characteristics of the body-drainjunction is found dependent of the hot-carrier stressing and of the layer dimensions. Alarge increases of the ideality factor, of the reverse recombination current, and of theseries resistance are shown to be more significant for small values of L and W. It isdemonstrated that the degradation of parameters is mainly caused by the generation ofinterface traps

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