Electrostatic Formation of Coupled Si/SiO2 Quantum Dot Systems | Zendy

Per Hyldgaard | Zendy; Henry K. Harbury | Zendy; Wolfgang Porod | Zendy

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Electrostatic Formation of Coupled Si/SiO₂ Quantum Dot Systems

Author(s) -

Per Hyldgaard,

Henry K. Harbury,

Wolfgang Porod

Publication year - 1998

Publication title -

vlsi design

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.123

H-Index - 24

eISSN - 1065-514X

pISSN - 1026-7123

DOI - 10.1155/1998/67609

Subject(s) - quantum dot , poisson's equation , electron , cellular automaton , charge (physics) , radius , coupling (piping) , physics , quantum dot cellular automaton , electrostatics , quantum , condensed matter physics , materials science , quantum mechanics , mathematics , computer security , algorithm , computer science , metallurgy

We present three-dimensional numerical modeling results for gated Si/SiO2 quantumdot systems in the few-electron regime. In our simulations, the electrostatic confiningpotential results from the Poisson equation assuming a self-consistent Thomas-Fermicharge model. We find that a very thin SiO2 top insulating layer allows an effectivecontrol with single-electron confinement in quantum dots with radius less than 10nmand investigate the detailed potential and resulting charge densities. Our three-dimensionalfinite-element modeling tool allows future investigations of the chargecoupling in gated few-electron quantum-dot cellular automata

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