Theory of Electron Transport in Small Semiconductor Devices Using the Pauli Master Equation
Author(s) -
Massimo V. Fischetti
Publication year - 1998
Publication title -
vlsi design
Language(s) - English
Resource type - Journals
eISSN - 1065-514X
pISSN - 1026-7123
DOI - 10.1155/1998/67427
Subject(s) - master equation , pauli exclusion principle , boltzmann equation , wave function , statistical physics , electron , physics , monte carlo method , convection–diffusion equation , range (aeronautics) , boundary value problem , simple (philosophy) , basis (linear algebra) , diffusion equation , quantum mechanics , mathematics , mechanics , materials science , engineering , quantum , statistics , geometry , philosophy , epistemology , composite material , metric (unit) , operations management
It is argued that the Pauli master equation can be used to simulate electron transport in very small electronic devices under steady-state conditions. Written in a basis of suitable wavefunctions and with the appropriate open boundary conditions, this equation removes some of the approximations which render the Boltzmann equation unsatisfactory at small length-scales. The main problems consist in describing the interaction of the system with the reservoirs and in assessing the range of validity of the equation: Only devices smaller than the size of the electron wavepackets injected from the contacts can be handled. Two one-dimensional examples solved by a simple Monte Carlo technique are presented.
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