A Compound Semiconductor Process Simulator and itsApplication to Mask Dependent Undercut Etching | Zendy

Masami Kumagai | Zendy; Kiyoyuki Yokoyama | Zendy; Satoshi Tazawa | Zendy

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A Compound Semiconductor Process Simulator and itsApplication to Mask Dependent Undercut Etching

Author(s) -

Masami Kumagai,

Kiyoyuki Yokoyama,

Satoshi Tazawa

Publication year - 1998

Publication title -

vlsi design

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.123

H-Index - 24

eISSN - 1065-514X

pISSN - 1026-7123

DOI - 10.1155/1998/65787

Subject(s) - undercut , etching (microfabrication) , compound semiconductor , semiconductor , materials science , semiconductor device fabrication , process (computing) , silicon , semiconductor device , isotropic etching , optoelectronics , nanotechnology , computer science , layer (electronics) , composite material , wafer , epitaxy , operating system

This paper describes a process simulator that is designed to describe the etching and depositionprocesses used in constructing compound semiconductors, which have at least two differentatomic species. This nature dictates a very different response to compound semiconductorprocess from the silicon process. One of the most remarkable processes in compound semiconductorsis the reverse-mesa formation. This simulator successfully represents the mesaand the reverse mesa profiles that are often observed after chemical etching. The mask materialdependence of the undercut etching can also be simulated with a good agreement betweenthe experimental and the simulated shapes

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